colloidal quantum dot photodiodes (Quantum Dot Inc)
86
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Quantum Dot Inc
colloidal quantum dot photodiodes
Colloidal Quantum Dot Photodiodes, supplied by Quantum Dot Inc, used in various techniques. Bioz Stars score: 86/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/colloidal+quantum+dot+photodiodes/colloidal+dot+nature+photodiodes+quantum/pm42080285-236-15-16
Average 86 stars, based on 1 article reviews
Colloidal Quantum Dot Photodiodes, supplied by Quantum Dot Inc, used in various techniques. Bioz Stars score: 86/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/colloidal+quantum+dot+photodiodes/colloidal+dot+nature+photodiodes+quantum/pm42080285-236-15-16
Average 86 stars, based on 1 article reviews
colloidal quantum dot photodiodes - by Bioz Stars,
2026-10
86/100 stars
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other:Article Title: Heterogeneous Integration of Colloidal Quantum Dot Inks on Silicon Enables Highly Efficient and Stable Infrared Photodetectors Article Snippet: Integrating lead sulfide (PbS) colloidal quantum dots (CQDs) with crystalline silicon (c-Si) has been proven to be an effective strategy in extending the sensitivity of Si-based photodetectors into infrared regime.. Here, we demonstrate the successful integration of PbS CQD inks with Si and construct a highly efficient heterojunction infrared photodiode operating in the range from 800 up to 1500 nm.. Thanks to the well-passivated Si surface by a two-step chlorination/methylation method and high-quality CQD inks, the heterojunction photodiode yields a low density of trap states, as validated by transient photovoltage and photocurrent measurements. Article Title: Limiting Factors of Detectivity in Near-Infrared Colloidal Quantum Dot Photodetectors. Article Snippet: Lead sulfide colloidal quantum dots (PbS CQDs) have shown great potential in photodetectors owing to their promising optical properties, especially their strong and tunable absorption.. However, the limitation of the specific detectivity (D*) in CQD near-infrared (NIR) photodetectors remains unknown due to the ambiguous noise analysis.. Therefore, a clear understanding of the noise current is critically demanded. Article Title: Enhanced SWIR Photodetection in Colloidal Quantum Dot Photodiodes via Tunneling Current Suppression Article Snippet: Article Title: Interfacially-Engineered HgTe Colloidal Quantum Dot Photodiodes Using Self-Assembled Monolayer Article Snippet: Colloidal quantum dot (CQD) photodetectors hold promise for a new generation of infrared imaging with low cost and large array integration.. In spite of great progress, it remains crucial to further improve the detector performance.. In this study, we report HgTe CQD photodetectors with improved performance by leveraging an interfacial engineering approach. Article Title: Size Effects of 1,2-Ethanedithiol-Treated PbS Quantum Dots on Short-Wave Infrared Photodetector Hole Transport Layers. Article Snippet: Colloidal quantum dots (QDs), notably lead sulfide (PbS) QDs, represent a promising platform for short-wave infrared (SWIR) photodetection, offering a cost-effective and scalable alternative to conventional indium gallium arsenide (InGaAs) systems.. This study investigates the pivotal role of PbS QD size in optimizing the hole transport layer (HTL) for SWIR photodetectors, addressing the interplay among film morphology, electronic structure, and device performance.. Through the precise synthesis of monodisperse PbS QDs (3.33−4.14 nm) and solidstate ligand exchange with 1,2-ethanedithiol (EDT), we reveal that smaller QDs, while benefiting from strong quantum confinement and superior electron blocking, suffer from pronounced volumetric shrinkage and microcracking due to high ligand-to-QD ratios. Modification:Article Title: Improved Carrier Lifetimes of CdSe Thin Film via Te Doping for Photovoltaic Application. Article Snippet: Cadmium selenide (CdSe) solar cells have proven to be a remarkable potential top cell for a silicon-based tandem application.. However, the defects and short carrier lifetimes of CdSe thin films greatly limit the solar cell performance.. In this work, a Te-doped strategy is proposed to passivate the Se vacancy defects and increase the carrier lifetime of the CdSe thin film. Imaging:Article Title: A Colloidal Quantum Dot Thermistor and Bolometer. Article Snippet: .. Article Title: Multiresonant Grating to Replace Transparent Conductive Oxide Electrode for Bias Selected Filtering of Infrared Photoresponse. Article Snippet: .. 2014, 14, 2715−2719. (33) Tang, X.; Ackerman, M. M.; Chen, M.; Guyot-Sionnest, P. Dual-Band Infrared Imaging Using Stacked |